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| v01.0300 MICROWAVE CORPORATION HMC224MS8 GaAs MMIC T/R SWITCH 5.0 - 6.0 GHz Features Low Cost 5-6 GHz Switch Ultra Small Package: MSOP8 High Input P1dB: +33 dBm Single Positive Supply: +3 to +8V Typical Applications The HMC224MS8 is ideal for: * UNII & HiperLAN * PCMCIA WirelessLAN Functional Diagram General Description The HMC224MS8 is a low-cost SPDT switch in an 8-lead MSOP package for use in transmitreceive applications. The device can control signals from 5.0 to 6.0 GHz and is especially suited for 5.2 GHz UNII and 5.8 GHz ISM applications with only 1.2 dB loss. The design provides exceptional power handling performance; input P1dB = +33 dBm at 5 Volt bias. RF1 and RF2 are reflective shorts when "Off". On-chip circuitry allows single positive supply operation at very low DC current with control inputs compatible with CMOS and most TTL logic families. No DC blocking capacitors are required on RF I/O ports. 14 SWITCHES - SMT Electrical Specifications, TA = +25 C, Vdd = +5 Vdc, 50 Ohm System Parameter Frequency 5.0 - 6.0 GHz 5.1 - 5.4 GHz 5.4 - 5.9 GHz 5.0 - 6.0 GHz 5.1 - 5.4 GHz 5.4 - 5.9 GHz RF Common Return Loss RF1 & RF2 5.0 - 6.0 GHz 5.1 - 5.9 GHz 5.0 - 6.0 GHz 5.1 - 5.9 GHz 5.0 - 6.0 GHz 5.0 - 6.0 GHz 5.0 - 6.0 GHz 5.0 - 6.0 GHz 5.0 - 6.0 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 10 25 ns ns 20 26 22 11 12 11 11 27 29 31 33 Min. Typ. 1.3 1.2 1.3 24 31 27 15 16 14 15 31 33 35 37 Max. 1.6 1.5 1.6 Units dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm Insertion Loss Isolation Input Power for 1 dB Compression 0/3V Control 0/5V Control 0/3V Control 0/5V Control Input Third Order Intercept Switching Characteristics 14 - 72 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0300 HMC224MS8 GaAs MMIC T/R SWITCH 5.0 - 6.0 GHz Insertion Loss 0 -0.5 Isolation 0 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 -3.5 -4 4 5 6 FREQUENCY (GHz) 7 8 -10 ISOLATION (dB) -20 -30 -40 4 5 6 FREQUENCY (GHz) 7 8 Return Loss 0 -5 Absolute Maximum Ratings Bias Voltage Range (Vdd) Control Voltage Range (A & B) -0.2 to +12 Vdc -0.2 to Vdd Vdc -65 to +150 C -40 to +85 C 14 SWITCHES - SMT 14 - 73 RETURN LOSS (dB) S22 -10 -15 -20 -25 -30 4 5 6 FREQUENCY (GHz) 7 8 S11 RFC Storage Temperature Operating Temperature Truth Table *Control Input Voltage Tolerances are 0.2 Vdc. Bias Vdd (Vdc) 3 3 3 5 5 5 Control Input* A (Vdc) 0 0 Vdd 0 0 Vdd B (Vdc) 0 Vdd 0 0 Vdd 0 Bias Current Idd (uA) 10 10 10 45 45 115 Control Current Ia (uA) -5 -10 0 -22 -5 -40 Control Current Ib (uA) -5 0 -10 -23 -40 -5 Signal Path State RF to RF1 OFF ON OFF OFF ON OFF RF to RF2 OFF OFF ON OFF OFF ON Caution: Do not operate in 1dB compression at power levels above +33 dBm and do not "hot switch" power levels greater than +23 dBm (Vdd = +5Vdc). DC blocks are not required at ports RFC, RF1 and RF2. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0300 MICROWAVE CORPORATION HMC224MS8 GaAs MMIC T/R SWITCH 5.0 - 6.0 GHz Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 14 SWITCHES - SMT Typical Application Circuit 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Notes: 1. Control Inputs A and B can be driven directly with CMOS logic (HC) with V of 3 to 8 Volts applied to the CMOS logic gates and to pin 4 of the RF switch. 2. Set V to 5 Volts and use HCT series logic to provide a TTL driver interface. 3. Highest RF signal power capability is achieved with V set to +10V. However, the switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. 4. RF ByPass: Do not use RF bypass capacitors on Vdd, A or B ports. Resistors R1, R2, R3 = 100 Ohms should be placed close to the Vdd, A and B ports. Use resistor size 0402 to minimize parasitic inductances and capacitances. 5. DC Blocking capacitors are not required for each RF port. 6. Evaluation PCB available. 14 - 74 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0300 HMC224MS8 GaAs MMIC T/R SWITCH 5.0 - 6.0 GHz Evaluation PCB 14 SWITCHES - SMT 14 - 75 List of Material Item J1 - J3 J4 - J7 R1, R3 U1 PCB* Description PC Mount SMA RF Connector DC Pin 100 resistor, 0402 Pkg. HMC224MS8 T/R Switch 104518 Evaluation PCB The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com |
Price & Availability of HMC224MS8
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